22-25 September 2013
Modern oxide materials have already demonstrated their potential via numerous scientific and technological breakthroughs, such as optically-transparent conductors for solar cells, high temperature superconductivity, colossal magneto-resistance, ferro-electricity, multi-ferroicity, diluted magnetic semiconductors and so on.
We are now entering a new era in this field. With new techniques developed in the last few years, the control in the synthesis of these complex multi-element materials has reached an unprecedented level of perfection on the atomic scale. This enables us to exploit the enhanced possibilities arising for example, from combining different oxide materials to produce strategic interfaces, or from highly precise electronic doping. Such tailoring of oxide electronics by atomic control creates the possibility to provide new or improved functionality to the materials. This has led to many exciting new scientific concepts, with potential for technological applications.
The series of Oxide Electronics Workshops have become an important forum to discuss recent advances and emerging trends in this developing field.
The 20th Workshop on Oxide Electronics (WOE20) will be held at the UTown, National University of Singapore, Singapore, and will take place from September 22nd to September 25th, 2013.
The aim of the workshop is to provide an interdisciplinary forum for researchers, theorists as well as experimentalist on the design, fabrication, theory, analysis and applications of functional oxide (epitaxial) materials.
We would like to encourage you to take part in the workshop and submit an abstract. Please visit this website to stay informed.
On behalf of the organizing committees,
Chairman of the 20th Workshop on Oxide Electronics